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SIA416DJ-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? SC-70-6
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 11.3A SC70-6L
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Inventory: 9656
Minimum: 1
Total Price: USD $1.07
Unit Price: USD $1.07445
≥1 USD $1.07445
≥10 USD $0.8816
≥100 USD $0.85405
≥500 USD $0.8265
≥1000 USD $0.79895

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SC-70-6
Number of Pins 6
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel?
Published 2013
Series TrenchFET?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 83MOhm
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.5W Ta 19W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.5W
Case Connection DRAIN
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 83m Ω @ 3.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 295pF @ 50V
Current - Continuous Drain (Id) @ 25°C 11.3A Tc
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Rise Time 100 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 11.3A
Threshold Voltage 1.6V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 0.45 mJ

Dimensions

Height 750μm
Length 2.05mm
Width 2.05mm

Compliance

REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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