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SI2337DS-T1-GE3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
In a Pack of 20, P-Channel MOSFET, 1.75 A, 80 V, 3-Pin SOT-23 Vishay SI2337DS-T1-GE3
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Pricing & Ordering
Inventory: 5361
Minimum: 1
Total Price: USD $0.65
Unit Price: USD $0.64505
≥1 USD $0.64505
≥10 USD $0.52915
≥100 USD $0.513
≥500 USD $0.4959
≥1000 USD $0.47975
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Dimensions
Height 1.02mm
Length 3.04mm
Width 1.4mm
Technical
Operating Temperature -50°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 270MOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 760mW Ta 2.5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 760mW
Turn On Delay Time 15 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 270m Ω @ 1.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 500pF @ 40V
Current - Continuous Drain (Id) @ 25°C 2.2A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 18 ns
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) -2.2A
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -80V
Nominal Vgs -4 V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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