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SI7686DP-T1-E3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage PowerPAK? SO-8
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 35A PPAK SO-8
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Inventory: 1671
Minimum: 1
Total Price: USD $0.41
Unit Price: USD $0.4085
≥1 USD $0.4085
≥10 USD $0.33535
≥100 USD $0.3249
≥500 USD $0.31445
≥1000 USD $0.304
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 9.5mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 5W Ta 37.9W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 5W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.5m Ω @ 13.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1220pF @ 15V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Rise Time 16 ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 35A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 50A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 5 mJ
Dimensions
Height 1.04mm
Length 4.9mm
Width 5.89mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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