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IRFL110TRPBF

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-261-4, TO-261AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R
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Inventory: 790
Minimum: 1
Total Price: USD $0.78
Unit Price: USD $0.779577
≥1 USD $0.779577
≥10 USD $0.735451
≥100 USD $0.693824
≥500 USD $0.654543
≥1000 USD $0.617495

Technical Details

Supply Chain

Factory Lead Time 8 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Supplier Device Package SOT-223
Weight 250.212891mg

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 1.8mm
Length 6.7mm
Width 3.7mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 540mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Voltage 100V
Power Dissipation-Max 2W Ta 3.1W Tc
Element Configuration Single
Current 15A
Power Dissipation 3.1W
Turn On Delay Time 6.9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 540mOhm @ 900mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.5A Tc
Gate Charge (Qg) (Max) @ Vgs 8.3nC @ 10V
Rise Time 16ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 9.4 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 1.5A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Input Capacitance 180pF
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 540mOhm
Rds On Max 540 mΩ

Alternative Model

IPI045N10N3 G
Infineon Technologies AG

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