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DN3145N8-G
Microchip TechnologyRoHS 
RoHS compliant
RoHS compliantPackage TO-243AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MICROCHIP DN3145N8-G. MOSFET, N CHANNEL, 450V, 0.1A, TO-243AA-3
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Inventory: 7385
Minimum: 1
Total Price: USD $6.71
Unit Price: USD $6.7127
≥1 USD $6.7127
≥10 USD $5.5081
≥100 USD $5.3352
≥500 USD $5.16325
≥1000 USD $4.9913
Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Weight 52.786812mg
Transistor Element Material SILICON
Dimensions
Height 1.6mm
Length 4.6mm
Width 2.6mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.3W Ta
Element Configuration Single
Power Dissipation 1.3W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60 Ω @ 100mA, 0V
Input Capacitance (Ciss) (Max) @ Vds 120pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100mA Tj
Rise Time 15 ns
Drive Voltage (Max Rds On,Min Rds On) 0V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 100mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 450V
FET Feature Depletion Mode
Alternative Model
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