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2SK3065T100
ROHM SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-243AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 2A SOT-89
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Inventory: 8381
Minimum: 1
Total Price: USD $0.15
Unit Price: USD $0.1482
≥1 USD $0.1482
≥10 USD $0.1216
≥100 USD $0.1178
≥500 USD $0.114
≥1000 USD $0.1102
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2000
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 450mOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 2A
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 3
Number of Elements 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 500mW
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 320m Ω @ 1A, 4V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 160pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2A Ta
Rise Time 50 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4V
Vgs (Max) ±20V
Fall Time (Typ) 70 ns
Turn-Off Delay Time 120 ns
Continuous Drain Current (ID) 2A
Threshold Voltage 800mV
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 2A
Drain to Source Breakdown Voltage 60V
Nominal Vgs 800 mV
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Transistor Element Material SILICON
Alternative Model
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