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DMG3414U-7
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
N-Channel 20 V 2.5 mOhm Surface Mount Enhancement Mode Transistor SOT-23-3
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Inventory: 6729
Minimum: 1
Total Price: USD $0.09
Unit Price: USD $0.0912
≥1 USD $0.0912
≥500 USD $0.07505
≥1000 USD $0.07315
≥2000 USD $0.0703
≥5000 USD $0.0684
≥10000 USD $0.0608
Technical Details
Supply Chain
Factory Lead Time 22 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 25mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 780mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 780mW
Turn On Delay Time 8.1 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 8.2A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 829.9pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4.2A Ta
Gate Charge (Qg) (Max) @ Vgs 9.6nC @ 4.5V
Rise Time 8.3 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 9.6 ns
Turn-Off Delay Time 40.1 ns
Continuous Drain Current (ID) 4.2A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 1.1mm
Length 3mm
Width 1.4mm
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