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SI1021R-T1-GE3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage SC-75A
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 60V 190MA SC-75A
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Inventory: 8371
Minimum: 1
Total Price: USD $1.38
Unit Price: USD $1.3832
≥1 USD $1.3832
≥10 USD $1.13525
≥100 USD $1.09915
≥500 USD $1.064
≥1000 USD $1.02885
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-75A
Number of Pins 3
Transistor Element Material SILICON
Dimensions
Height 700μm
Length 1.58mm
Width 760μm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 4Ohm
Additional Feature LOW THRESHOLD
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 250mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 250mW
Turn On Delay Time 20 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 23pF @ 25V
Current - Continuous Drain (Id) @ 25°C 190mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 15V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) -190mA
Threshold Voltage -2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
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