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IPD60R3K3C6ATMA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 1.7A TO252-3
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Inventory: 2280
Minimum: 1
Total Price: USD $0.59
Unit Price: USD $0.5909
≥1 USD $0.5909
≥10 USD $0.48545
≥100 USD $0.47025
≥500 USD $0.45505
≥1000 USD $0.43985
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 3.949996g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series CoolMOS? C6
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 18.1W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.3 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 40μA
Input Capacitance (Ciss) (Max) @ Vds 93pF @ 100V
Current - Continuous Drain (Id) @ 25°C 1.7A Tc
Gate Charge (Qg) (Max) @ Vgs 4.6nC @ 10V
Rise Time 10 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 1.7A
Gate to Source Voltage (Vgs) 30V
Max Dual Supply Voltage 600V
Pulsed Drain Current-Max (IDM) 4A
Avalanche Energy Rating (Eas) 6 mJ
Dimensions
Height 2.41mm
Length 6.73mm
Width 6.22mm
Compliance
RoHS Status ROHS3 Compliant
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