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NTTFS4C05NTAG

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 8-PowerWDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 30V 19.4A 8-Pin WDFN EP T/R
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Inventory: 8475
Minimum: 1
Total Price: USD $0.31
Unit Price: USD $0.31461
≥1 USD $0.31461
≥10 USD $0.2968
≥100 USD $0.28
≥500 USD $0.26415
≥1000 USD $0.2492
≥3000 USD $0.23509

Technical Details

Supply Chain

Factory Lead Time 18 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)

Physical

Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code S-PDSO-F5
Number of Elements 1
Power Dissipation-Max 820mW Ta 33W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.6m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1988pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12A Ta 75A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 19.4A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 75A
DS Breakdown Voltage-Min 30V

Alternative Model

NSBA114EDXV6T5G
ON Semiconductor

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