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BSP122,115

Nexperia USA Inc.
RoHS
RoHS RoHS compliant
Package TO-261-4, TO-261AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description NEXPERIA - BSP122,115 - MOSFET Transistor, N Channel, 750 mA, 200 V, 1.7 ohm, 10 V, 2 V
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Inventory: 3283
Minimum: 1
Total Price: USD $3.53
Unit Price: USD $3.52735
≥1 USD $3.52735
≥10 USD $2.8937
≥100 USD $2.80345
≥500 USD $2.7132
≥1000 USD $2.62295

Technical Details

Supply Chain

Factory Lead Time 4 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1996
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 2.5Ohm
HTS Code 8541.29.00.75
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
JESD-30 Code R-PDSO-G4
Number of Elements 1
Power Dissipation-Max 1.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5 Ω @ 750mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 550mA Ta
Drive Voltage (Max Rds On,Min Rds On) 2.4V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 550mA
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 200V
Drain Current-Max (Abs) (ID) 0.55A
Drain to Source Breakdown Voltage 200V
Nominal Vgs 2 V

Dimensions

Height 1.7mm
Length 6.7mm
Width 3.7mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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