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IRF9510SPBF
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 100V 4A D2PAK
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Inventory: 5375
Minimum: 1
Total Price: USD $4.08
Unit Price: USD $4.084388
≥1 USD $4.084388
≥10 USD $3.853195
≥100 USD $3.635092
≥500 USD $3.429327
≥1000 USD $3.235224
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.437803g
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 43W Tc
Element Configuration Single
Power Dissipation 3.7W
Turn On Delay Time 10 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 8.7nC @ 10V
Rise Time 27ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 17 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 4A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Input Capacitance 200pF
Drain to Source Resistance 1.2Ohm
Rds On Max 1.2 Ω
Nominal Vgs 4 V
Dimensions
Height 4.83mm
Length 10.41mm
Width 9.65mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
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