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STF15NM65N
STMicroelectronicsRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
STMICROELECTRONICS STF15NM65N Power MOSFET, N Channel, 12 A, 650 V, 0.35 ohm, 10 V, 3 V
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Inventory: 950
Minimum: 1
Total Price: USD $1.35
Unit Price: USD $1.35375
≥1 USD $1.35375
≥10 USD $1.11055
≥100 USD $1.07635
≥500 USD $1.0412
≥1000 USD $1.007
Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Supplier Device Package TO-220FP
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MDmesh? II
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 380MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Base Part Number STF15
Number of Elements 1
Power Dissipation-Max 30W Tc
Element Configuration Single
Power Dissipation 35W
Turn On Delay Time 55.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 983pF @ 50V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 33.3nC @ 10V
Rise Time 8ns
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 26 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 12A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 650V
Input Capacitance 983pF
Drain to Source Resistance 270mOhm
Rds On Max 380 mΩ
Dimensions
Height 16.4mm
Length 10.4mm
Width 4.6mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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