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IPS80R2K0P7AKMA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-251-3 Stub Leads, IPak
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 800V 3A TO251-3
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Inventory: 5080
Minimum: 1
Total Price: USD $0.6
Unit Price: USD $0.599354
≥1 USD $0.599354
≥10 USD $0.565428
≥100 USD $0.533425
≥500 USD $0.50323
≥1000 USD $0.474745
Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Compliance
RoHS Status ROHS3 Compliant
Physical
Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Series CoolMOS? P7
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSIP-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 24W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2 Ω @ 940mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 175pF @ 500V
Current - Continuous Drain (Id) @ 25°C 3A Tc
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain-source On Resistance-Max 2Ohm
Pulsed Drain Current-Max (IDM) 6A
DS Breakdown Voltage-Min 800V
Avalanche Energy Rating (Eas) 6 mJ
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