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STD5N52K3
STMicroelectronicsRoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
STMICROELECTRONICS STD5N52K3 MOSFET Transistor, N Channel, 4.4 A, 525 V, 1.2 ohm, 10 V, 3.75 V
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Inventory: 2276
Minimum: 1
Total Price: USD $0.35
Unit Price: USD $0.352618
≥1 USD $0.352618
≥10 USD $0.332649
≥100 USD $0.313822
≥500 USD $0.296069
≥1000 USD $0.279303
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series SuperMESH3?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 1.5Ohm
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Base Part Number STD5N
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 70W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 70W
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5 Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 545pF @ 100V
Current - Continuous Drain (Id) @ 25°C 4.4A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 11 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 4.4A
Threshold Voltage 3.75V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 525V
Dimensions
Height 2.4mm
Length 6.6mm
Width 6.2mm
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
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