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ZXMN6A08KTC
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 5.36A DPAK
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Inventory: 1775
Minimum: 1
Total Price: USD $4.85
Unit Price: USD $4.84975
≥1 USD $4.84975
≥10 USD $3.97955
≥100 USD $3.8551
≥500 USD $3.73065
≥1000 USD $3.6062
Technical Details
Supply Chain
Factory Lead Time 17 Weeks
Technical
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.12W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 2.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 4.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 459pF @ 40V
Current - Continuous Drain (Id) @ 25°C 5.36A Ta
Gate Charge (Qg) (Max) @ Vgs 5.8nC @ 10V
Rise Time 2.1 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.6 ns
Turn-Off Delay Time 12.3 ns
Continuous Drain Current (ID) 7.9A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.08Ohm
Drain to Source Breakdown Voltage 60V
Dimensions
Height 2.39mm
Length 6.73mm
Width 6.22mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
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