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IPW60R041C6FKSA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 650V 77.5A 3-Pin(3+Tab) TO-247
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Inventory: 7575
Minimum: 1
Total Price: USD $18.59
Unit Price: USD $18.593778
≥1 USD $18.593778
≥10 USD $17.541303
≥100 USD $16.548395
≥500 USD $15.611695
≥1000 USD $14.728013
Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Compliance
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 481W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 41m Ω @ 44.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 2.96mA
Input Capacitance (Ciss) (Max) @ Vds 6530pF @ 10V
Current - Continuous Drain (Id) @ 25°C 77.5A Tc
Gate Charge (Qg) (Max) @ Vgs 290nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.041Ohm
Pulsed Drain Current-Max (IDM) 272A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 1954 mJ
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