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IPP65R110CFDXKSA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 700V 31.2A TO220
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Inventory: 6989
Minimum: 1
Total Price: USD $32.22
Unit Price: USD $32.2183
≥1 USD $32.2183
≥10 USD $26.43565
≥100 USD $25.60915
≥500 USD $24.7836
≥1000 USD $23.9571

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 277.8W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 110m Ω @ 12.7A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.3mA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3240pF @ 100V
Current - Continuous Drain (Id) @ 25°C 31.2A Tc
Gate Charge (Qg) (Max) @ Vgs 118nC @ 10V
Rise Time 11 ns
Drain to Source Voltage (Vdss) 700V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 68 ns
Continuous Drain Current (ID) 31.2A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Pulsed Drain Current-Max (IDM) 99.6A
Avalanche Energy Rating (Eas) 845 mJ

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