Operating Temperature -65°C~150°C TJ
Packaging Tube
Series MDmesh?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 400mOhm
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Current Rating 11A
Base Part Number STF11
Pin Count 3
Number of Elements 1
Power Dissipation-Max 35W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 35W
Case Connection ISOLATED
Turn On Delay Time 22 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 400m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1630pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 43.6nC @ 10V
Rise Time 17 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 46 ns
Continuous Drain Current (ID) 11A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 44A
Avalanche Energy Rating (Eas) 400 mJ