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FDA28N50F
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-3P-3, SC-65-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 28A TO-3PN
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Inventory: 5169
Minimum: 1
Total Price: USD $2.24
Unit Price: USD $2.24105
≥1 USD $2.24105
≥10 USD $1.83825
≥100 USD $1.78125
≥500 USD $1.7233
≥1000 USD $1.6663
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Dimensions
Height 20.1mm
Length 15.8mm
Width 5mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series UniFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 310W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 310W
Turn On Delay Time 67 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 175m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5387pF @ 25V
Current - Continuous Drain (Id) @ 25°C 28A Tc
Gate Charge (Qg) (Max) @ Vgs 105nC @ 10V
Rise Time 137 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 101 ns
Turn-Off Delay Time 192 ns
Continuous Drain Current (ID) 28A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.175Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 112A
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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