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STI24NM60N
STMicroelectronicsRoHS 
RoHS compliant
RoHS compliantPackage TO-262-3 Long Leads, I2Pak, TO-262AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N CH 600V 17A I2PAK
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Inventory: 8963
Minimum: 1
Total Price: USD $7.47
Unit Price: USD $7.46605
≥1 USD $7.46605
≥200 USD $6.1256
≥500 USD $5.93465
≥1000 USD $5.74275
Technical Details
Supply Chain
Lifecycle Status NRND (Last Updated: 7 months ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Transistor Element Material SILICON
Dimensions
Height 10.75mm
Length 10.4mm
Width 4.6mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MDmesh? II
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Base Part Number STI24N
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 125W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 125W
Case Connection DRAIN
Turn On Delay Time 11.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 190m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 50V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Rise Time 16.5 ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 37 ns
Turn-Off Delay Time 73 ns
Continuous Drain Current (ID) 17A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 68A
DS Breakdown Voltage-Min 600V
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