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SPP21N50C3XKSA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 560V 21A TO-220AB
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Inventory: 8008
Minimum: 1
Total Price: USD $2.18
Unit Price: USD $2.17835
≥1 USD $2.17835
≥10 USD $1.78695
≥100 USD $1.73185
≥500 USD $1.6758
≥1000 USD $1.61975
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package PG-TO220-3-1
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series CoolMOS?
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 560V
Technology MOSFET (Metal Oxide)
Current Rating 21A
Number of Elements 1
Power Dissipation-Max 208W Tc
Element Configuration Single
Power Dissipation 208W
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 190mOhm @ 13.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1mA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Rise Time 5ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.5 ns
Turn-Off Delay Time 67 ns
Continuous Drain Current (ID) 21A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 500V
Drain to Source Breakdown Voltage 560V
Input Capacitance 2.4nF
Drain to Source Resistance 190mOhm
Rds On Max 190 mΩ
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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