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IPB60R099C6ATMA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 600V 37.9A 3-Pin(2+Tab) TO-263
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Inventory: 8683
Minimum: 1
Total Price: USD $45.04
Unit Price: USD $45.037845
≥1 USD $45.037845
≥10 USD $42.488529
≥100 USD $40.083522
≥500 USD $37.814643
≥1000 USD $35.674189
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series CoolMOS?
JESD-609 Code e3
Pbfree Code no
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 278W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 99m Ω @ 18.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.21mA
Input Capacitance (Ciss) (Max) @ Vds 2660pF @ 100V
Current - Continuous Drain (Id) @ 25°C 37.9A Tc
Gate Charge (Qg) (Max) @ Vgs 119nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 37.9A
Drain-source On Resistance-Max 0.099Ohm
Pulsed Drain Current-Max (IDM) 112A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 796 mJ
Compliance
RoHS Status ROHS3 Compliant
Physical
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON
Alternative Model
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