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FDP3632

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220AB Tube
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Inventory: 954
Minimum: 1
Total Price: USD $16.11
Unit Price: USD $16.10915
≥1 USD $16.10915
≥10 USD $13.2183
≥100 USD $12.80505
≥500 USD $12.3918
≥1000 USD $11.97855

Technical Details

Supply Chain

Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 3 days ago)

Physical

Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 9MOhm
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 44A
Number of Elements 1
Power Dissipation-Max 310W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 310W
Case Connection DRAIN
Turn On Delay Time 30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Ta 80A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 39 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 46 ns
Turn-Off Delay Time 96 ns
Continuous Drain Current (ID) 80A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V

Dimensions

Height 9.4mm
Length 10.67mm
Width 4.83mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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