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DMP2069UFY4-7
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage 3-XFDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET MOSFET P-CHAN.
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Inventory: 7378
Minimum: 1
Total Price: USD $0.07
Unit Price: USD $0.07181
≥1 USD $0.07181
≥500 USD $0.0528
≥1000 USD $0.044
≥2000 USD $0.04037
≥5000 USD $0.03773
≥10000 USD $0.03509
≥15000 USD $0.03394
≥50000 USD $1.99648
Technical Details
Supply Chain
Factory Lead Time 15 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel?
Published 2012
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 530mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 530mW
Case Connection DRAIN
Turn On Delay Time 80.4 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 54m Ω @ 2.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 214pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.5A Ta
Gate Charge (Qg) (Max) @ Vgs 9.1nC @ 4.5V
Rise Time 155.1 ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 423.8 ns
Turn-Off Delay Time 688.1 ns
Continuous Drain Current (ID) 2.5A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.054Ohm
Drain to Source Breakdown Voltage -20V
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