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DMG2302U-7
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET ENHANCE MODE MOSFET 20V N-Chan
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Inventory: 6097
Minimum: 1
Total Price: USD $0.08
Unit Price: USD $0.08075
≥1 USD $0.08075
≥500 USD $0.0665
≥1000 USD $0.0646
≥2000 USD $0.0627
≥5000 USD $0.05985
≥10000 USD $0.05415
Technical Details
Supply Chain
Factory Lead Time 5 Weeks
Technical
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel?
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 90MOhm
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 800mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 800mW
Turn On Delay Time 7.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 90m Ω @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 594.3pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4.2A Ta
Gate Charge (Qg) (Max) @ Vgs 7nC @ 4.5V
Rise Time 9.8 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 6.7 ns
Turn-Off Delay Time 28.1 ns
Continuous Drain Current (ID) 4.2A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Dimensions
Height 1mm
Length 3mm
Width 1.4mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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