Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Pin Count 3
Number of Elements 1
Power Dissipation-Max 360mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 715mW
Case Connection DRAIN
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
Current - Continuous Drain (Id) @ 25°C 450mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V
Rise Time 6 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 450mA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain Current-Max (Abs) (ID) 0.45A
Drain to Source Breakdown Voltage 60V
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series Automotive, AEC-Q101, TrenchMOS?
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3