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FCA76N60N
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-3P-3, SC-65-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
FAIRCHILD SEMICONDUCTOR FCA76N60N Power MOSFET, N Channel, 76 A, 600 V, 0.028 ohm, 10 V, 2 V
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Inventory: 3218
Minimum: 1
Total Price: USD $9.65
Unit Price: USD $9.64915
≥1 USD $9.64915
≥10 USD $7.9173
≥100 USD $7.6703
≥500 USD $7.42235
≥1000 USD $7.17535
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Dimensions
Height 20.1mm
Length 15.8mm
Width 5mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series SupreMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 543W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 543W
Case Connection DRAIN
Turn On Delay Time 34 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 36m Ω @ 38A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 12385pF @ 100V
Current - Continuous Drain (Id) @ 25°C 76A Tc
Gate Charge (Qg) (Max) @ Vgs 285nC @ 10V
Rise Time 24 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 32 ns
Turn-Off Delay Time 235 ns
Continuous Drain Current (ID) 76A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 228A
Avalanche Energy Rating (Eas) 8022 mJ
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
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