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IPP50R190CEXKSA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 18.5A PG-TO-220
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Inventory: 6648
Minimum: 1
Total Price: USD $5.53
Unit Price: USD $5.52995
≥1 USD $5.52995
≥10 USD $4.53815
≥100 USD $4.39565
≥500 USD $4.2541
≥1000 USD $4.11255
Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS? CE
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Power Dissipation-Max 127W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 127W
Turn On Delay Time 9.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 190m Ω @ 6.2A, 13V
Vgs(th) (Max) @ Id 3.5V @ 510μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1137pF @ 100V
Current - Continuous Drain (Id) @ 25°C 18.5A Tc
Gate Charge (Qg) (Max) @ Vgs 47.2nC @ 10V
Rise Time 8.5 ns
Drive Voltage (Max Rds On,Min Rds On) 13V
Vgs (Max) ±20V
Fall Time (Typ) 7.5 ns
Turn-Off Delay Time 54 ns
Continuous Drain Current (ID) 18.5A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 500V
Drain-source On Resistance-Max 0.19Ohm
Drain to Source Breakdown Voltage 550V
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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