Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh? II
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 115mOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STW30N
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 190W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 190W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 115m Ω @ 13.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2740pF @ 50V
Current - Continuous Drain (Id) @ 25°C 27A Tc
Gate Charge (Qg) (Max) @ Vgs 94nC @ 10V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 115 ns
Continuous Drain Current (ID) 13.5A
Threshold Voltage 3V
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 27A
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 108A
Avalanche Energy Rating (Eas) 900 mJ