Operating Temperature -55?°C~175?°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series HEXFET??, StrongIRFETa??
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 375W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 375W
Case Connection DRAIN
Turn On Delay Time 52 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2m ?? @ 100A, 10V
Vgs(th) (Max) @ Id 3.7V @ 250??A
Input Capacitance (Ciss) (Max) @ Vds 13703pF @ 25V
Current - Continuous Drain (Id) @ 25?°C 195A Tc
Gate Charge (Qg) (Max) @ Vgs 411nC @ 10V
Rise Time 141 ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ?±20V
Fall Time (Typ) 104 ns
Turn-Off Delay Time 172 ns
Continuous Drain Current (ID) 195A
Threshold Voltage 3.7V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.002Ohm
Pulsed Drain Current-Max (IDM) 760A
DS Breakdown Voltage-Min 60V