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FDD3680

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 100V 25A 3-Pin(2+Tab) TO-252AA T/R
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Inventory: 3336
Minimum: 1
Total Price: USD $0.21
Unit Price: USD $0.20805
≥1 USD $0.20805
≥10 USD $0.171
≥100 USD $0.1653
≥500 USD $0.1596
≥1000 USD $0.15485

Technical Details

Supply Chain

Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 46MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 25A
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 68W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 68W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 46m Ω @ 6.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1735pF @ 50V
Current - Continuous Drain (Id) @ 25°C 25A Ta
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Rise Time 8.5 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 63 ns
Continuous Drain Current (ID) 25A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 26A
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 245 mJ

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