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BUK964R7-80E,118
Nexperia USA Inc.RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 80V 120A D2PAK
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Inventory: 3392
Minimum: 1
Total Price: USD $3.28
Unit Price: USD $3.283395
≥1 USD $3.283395
≥10 USD $3.097537
≥100 USD $2.922215
≥500 USD $2.756801
≥1000 USD $2.600753
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Compliance
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series Automotive, AEC-Q101, TrenchMOS?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 324W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 324W
Case Connection DRAIN
Turn On Delay Time 54.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 15340pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 92.1nC @ 5V
Rise Time 95.7 ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±10V
Fall Time (Typ) 82.3 ns
Turn-Off Delay Time 112 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 15V
Max Dual Supply Voltage 80V
Drain-source On Resistance-Max 0.0047Ohm
Drain to Source Breakdown Voltage 80V
Pulsed Drain Current-Max (IDM) 667A
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