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CSD16556Q5B
Texas InstrumentsRoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 25V 100A 8VSON
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Inventory: 5347
Minimum: 1
Total Price: USD $1.92
Unit Price: USD $1.9152
≥1 USD $1.9152
≥10 USD $1.5713
≥100 USD $1.5219
≥500 USD $1.47345
≥1000 USD $1.42405
Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Dimensions
Length 5mm
Width 6mm
Thickness 950μm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Base Part Number CSD16556
Number of Elements 1
Power Dissipation-Max 3.2W Ta 191W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.2W
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.07m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 1.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6180pF @ 15V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 47nC @ 4.5V
Rise Time 34 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 1.4V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 40A
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 249A
Avalanche Energy Rating (Eas) 530 mJ
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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