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FDMC86324
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET 80V N-Channel PowerTrench MOSFET
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Inventory: 9839
Minimum: 1
Total Price: USD $4.19
Unit Price: USD $4.190306
≥1 USD $4.190306
≥10 USD $3.953113
≥100 USD $3.729354
≥500 USD $3.518259
≥1000 USD $3.319117
Technical Details
Supply Chain
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 22 hours ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 32.13mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series PowerTrench?
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Nickel/Palladium (Ni/Pd)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code S-PDSO-N5
Number of Elements 1
Power Dissipation-Max 2.3W Ta 41W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 41W
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 23m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 965pF @ 50V
Current - Continuous Drain (Id) @ 25°C 7A Ta 20A Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Rise Time 4 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 7A
Threshold Voltage 3.1V
JEDEC-95 Code MO-240BA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7A
Drain-source On Resistance-Max 0.023Ohm
Drain to Source Breakdown Voltage 80V
Pulsed Drain Current-Max (IDM) 30A
Avalanche Energy Rating (Eas) 72 mJ
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Dimensions
Height 1.05mm
Length 3.3mm
Width 3.3mm
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