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FDP030N06
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 120A TO220
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Inventory: 983
Minimum: 1
Total Price: USD $0.83
Unit Price: USD $0.8303
≥1 USD $0.8303
≥10 USD $0.68115
≥100 USD $0.66025
≥500 USD $0.6384
≥1000 USD $0.6175
Technical Details
Supply Chain
Factory Lead Time 9 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 2.421g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 231W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 231W
Turn On Delay Time 39 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.2m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9815pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 151nC @ 10V
Rise Time 178 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 33 ns
Turn-Off Delay Time 54 ns
Continuous Drain Current (ID) 193A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 772A
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 15.38mm
Length 10.1mm
Width 4.7mm
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