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DMG4466SSS-13
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD
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Inventory: 9133
Minimum: 1
Total Price: USD $8.91
Unit Price: USD $8.9072
≥1 USD $8.9072
≥10 USD $7.30835
≥100 USD $7.08035
≥500 USD $6.8514
≥1000 USD $6.6234
Technical Details
Supply Chain
Factory Lead Time 15 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 73.992255mg
Transistor Element Material SILICON
Dimensions
Height 1.5mm
Length 4.95mm
Width 3.95mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.42W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.42W
Turn On Delay Time 2.9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 23m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 478.9pF @ 15V
Current - Continuous Drain (Id) @ 25°C 10A Ta
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 7.9 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±25V
Fall Time (Typ) 3.1 ns
Turn-Off Delay Time 14.6 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.023Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 60A
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
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