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DMN2075U-7
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 4.2A SOT23
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Inventory: 1682
Minimum: 1
Total Price: USD $0.12
Unit Price: USD $0.1197
≥1 USD $0.1197
≥10 USD $0.09785
≥100 USD $0.095
≥500 USD $0.09215
≥1000 USD $0.0893
Technical Details
Supply Chain
Factory Lead Time 40 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 45mOhm
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 800mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 800mW
Turn On Delay Time 7.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 38m Ω @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 594.3pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4.2A Ta
Gate Charge (Qg) (Max) @ Vgs 7nC @ 4.5V
Rise Time 9.8 ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 6.7 ns
Turn-Off Delay Time 28.1 ns
Continuous Drain Current (ID) 4.2A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 8V
DS Breakdown Voltage-Min 20V
Dimensions
Height 1.1mm
Length 3mm
Width 1.4mm
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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