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FDB33N25TM
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 250V 33A D2PAK
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Inventory: 3030
Minimum: 1
Total Price: USD $1.41
Unit Price: USD $1.41397
≥1 USD $1.41397
≥10 USD $1.33394
≥100 USD $1.25843
≥500 USD $1.1872
≥1000 USD $1.12
≥3000 USD $1.0566
Technical Details
Supply Chain
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 19 hours ago)
Dimensions
Height 4.83mm
Length 10.67mm
Width 11.33mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series UniFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 94MOhm
Additional Feature FAST SWITCHING, AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 235W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 235W
Case Connection DRAIN
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 94m Ω @ 16.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2135pF @ 25V
Current - Continuous Drain (Id) @ 25°C 33A Tc
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Rise Time 230 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 120 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 33A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 250V
Nominal Vgs 3 V
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.31247g
Transistor Element Material SILICON
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