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IRFZ48NPBF
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 64A TO-220AB
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Inventory: 2698
Minimum: 1
Total Price: USD $0.55
Unit Price: USD $0.5529
≥1 USD $0.5529
≥10 USD $0.4541
≥100 USD $0.43985
≥500 USD $0.4256
≥1000 USD $0.41135
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2001
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Subcategory FET General Purpose Power
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 250
Current Rating 64A
Time@Peak Reflow Temperature-Max (s) 30
Lead Pitch 2.54mm
Number of Elements 1
Power Dissipation-Max 130W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 94W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14m Ω @ 32A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1970pF @ 25V
Current - Continuous Drain (Id) @ 25°C 64A Tc
Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V
Rise Time 78 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 50 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 64A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Dual Supply Voltage 55V
Recovery Time 100 ns
Nominal Vgs 4 V
Dimensions
Height 8.77mm
Length 10.54mm
Width 4.69mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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