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IRFZ44VPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 55A TO-220AB
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Inventory: 3569
Minimum: 1
Total Price: USD $0.4
Unit Price: USD $0.39615
≥1 USD $0.39615
≥10 USD $0.3249
≥100 USD $0.3154
≥500 USD $0.30495
≥1000 USD $0.2945

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON

Dimensions

Height 8.77mm
Length 10.668mm
Width 4.826mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2000
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Current Rating 55A
Number of Elements 1
Power Dissipation-Max 115W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 115W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16.5m Ω @ 31A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1812pF @ 25V
Current - Continuous Drain (Id) @ 25°C 55A Tc
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Rise Time 97 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 57 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 55A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 220A
Dual Supply Voltage 60V
Recovery Time 105 ns
Nominal Vgs 4 V

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