Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1998
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 9.7A
Lead Pitch 2.54mm
Number of Elements 1
Power Dissipation-Max 48W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 48W
Case Connection DRAIN
Turn On Delay Time 4.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 200m Ω @ 5.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9.7A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 23 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 23 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 9.7A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 9.5A
Drain-source On Resistance-Max 0.2Ohm
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Recovery Time 150 ns
Nominal Vgs 4 V