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ZVP3306A
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 60V 160MA TO92-3
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Inventory: 2906
Minimum: 1
Total Price: USD $0.54
Unit Price: USD $0.5377
≥1 USD $0.5377
≥10 USD $0.4408
≥100 USD $0.4275
≥500 USD $0.41325
≥1000 USD $0.39995
Technical Details
Supply Chain
Factory Lead Time 17 Weeks
Physical
Mount Surface Mount
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2006
Tolerance 1%
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 470kOhm
Terminal Finish Matte Tin (Sn)
Voltage - Rated 75V
Subcategory Other Transistors
Power Rating 100mW
Voltage - Rated DC -60V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Current Rating -160mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Case Code (Metric) 1608
Case Code (Imperial) 0603
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 625mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 625mW
Turn On Delay Time 8 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 14 Ω @ 200mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 18V
Current - Continuous Drain (Id) @ 25°C 160mA Ta
Rise Time 8 ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 8 ns
Continuous Drain Current (ID) 160mA
Threshold Voltage -3.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Feedback Cap-Max (Crss) 8 pF
Compliance
Radiation Hardening No
REACH SVHC Yes
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 450μm
Length 1.6mm
Width 800μm
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