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IRF520PBF
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 9.2A TO-220AB
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Inventory: 2681
Minimum: 1
Total Price: USD $0.56
Unit Price: USD $0.5643
≥1 USD $0.5643
≥10 USD $0.46265
≥100 USD $0.4484
≥500 USD $0.43415
≥1000 USD $0.4199
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1997
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 270mOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 9.2A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 60W Tc
Element Configuration Single
Power Dissipation 60W
Turn On Delay Time 8.8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 270mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9.2A Tc
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Rise Time 30ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 9.2A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Input Capacitance 360pF
Recovery Time 260 ns
Drain to Source Resistance 270mOhm
Rds On Max 270 mΩ
Nominal Vgs 10 V
Dimensions
Height 9.01mm
Length 10.41mm
Width 4.7mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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