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IRF9510PBF
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 100V 4A TO-220AB
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Inventory: 2200
Minimum: 1
Total Price: USD $0.48
Unit Price: USD $0.4845
≥1 USD $0.4845
≥10 USD $0.3971
≥30 USD $0.38475
≥100 USD $0.3724
≥500 USD $0.36005
≥1000 USD $0.323
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Dimensions
Height 19.89mm
Length 10.41mm
Width 4.7mm
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 1.2Ohm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC -100V
Technology MOSFET (Metal Oxide)
Current Rating -4A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 43W Tc
Element Configuration Single
Power Dissipation 43W
Turn On Delay Time 10 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 8.7nC @ 10V
Rise Time 27ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 17 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) -4A
Threshold Voltage -2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -100V
Input Capacitance 200pF
Recovery Time 160 ns
Max Junction Temperature (Tj) 175°C
Drain to Source Resistance 1.2Ohm
Rds On Max 1.2 Ω
Nominal Vgs -4 V
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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