Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 10Ohm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Current Rating 180mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 700mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 700mW
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10 Ω @ 250mA, 5V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 85pF @ 25V
Current - Continuous Drain (Id) @ 25°C 180mA Ta
Rise Time 8 ns
Drive Voltage (Max Rds On,Min Rds On) 3V 5V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 180mA
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Feedback Cap-Max (Crss) 7 pF