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IRF610PBF
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 3.3A TO-220AB
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Inventory: 8610
Minimum: 1
Total Price: USD $0.51
Unit Price: USD $0.5054
≥1 USD $0.5054
≥10 USD $0.4142
≥100 USD $0.40185
≥500 USD $0.38855
≥1000 USD $0.37525
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Dimensions
Height 9.01mm
Length 10.41mm
Width 4.7mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 1.5Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Current Rating 3.3A
Number of Elements 1
Number of Channels 1
Voltage 200V
Power Dissipation-Max 36W Tc
Element Configuration Single
Power Dissipation 36W
Turn On Delay Time 8.2 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.3A Tc
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Rise Time 17ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8.9 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 3.3A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Input Capacitance 140pF
Recovery Time 310 ns
Drain to Source Resistance 1.5Ohm
Rds On Max 1.5 Ω
Nominal Vgs 4 V
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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