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PSMN059-150Y,115

Nexperia USA Inc.
RoHS
RoHS RoHS compliant
Package SC-100, SOT-669
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description NEXPERIA - PSMN059-150Y,115 - Trans MOSFET N-CH 150V 43A 5-Pin(4+Tab) LFPAK T/R
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Inventory: 8166
Minimum: 1
Total Price: USD $1.07
Unit Price: USD $1.07445
≥1 USD $1.07445
≥10 USD $0.8816
≥100 USD $0.85405
≥500 USD $0.8265
≥1000 USD $0.79895

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 59MOhm
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 113W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 113W
Case Connection DRAIN
Turn On Delay Time 14.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 59m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1529pF @ 30V
Current - Continuous Drain (Id) @ 25°C 43A Tc
Gate Charge (Qg) (Max) @ Vgs 27.9nC @ 10V
Rise Time 42 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 11.1 ns
Turn-Off Delay Time 54.2 ns
Continuous Drain Current (ID) 43A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 150V
Drain to Source Breakdown Voltage 150V
Avalanche Energy Rating (Eas) 255 mJ

Alternative Model

BC847AW-7-F
Diodes Incorporated

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