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IRFB20N50KPBF
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Single N-Channel 500 V 0.29 Ohms Flange Mount Power Mosfet - TO-220AB
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Inventory: 2450
Minimum: 1
Total Price: USD $8.06
Unit Price: USD $8.05505
≥1 USD $8.05505
≥10 USD $6.60915
≥100 USD $6.403
≥500 USD $6.1959
≥1000 USD $5.98975
Technical Details
Supply Chain
Factory Lead Time 11 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Dimensions
Height 9.01mm
Length 10.41mm
Width 4.7mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 210mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 280W Tc
Element Configuration Single
Power Dissipation 280W
Turn On Delay Time 22 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 250mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2870pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 74ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 33 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 20A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Input Capacitance 2.87nF
Drain to Source Resistance 250mOhm
Rds On Max 250 mΩ
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