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PSMN8R2-80YS,115
Nexperia USA Inc.RoHS 
RoHS compliant
RoHS compliantPackage SC-100, SOT-669
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 80V 82A LFPAK
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Inventory: 2981
Minimum: 1
Total Price: USD $5.37
Unit Price: USD $5.37035
≥1 USD $5.37035
≥10 USD $4.4061
≥100 USD $4.26835
≥500 USD $4.1306
≥1000 USD $3.99285
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Weight 453.59237mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Digi-Reel?
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 130W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 130W
Case Connection DRAIN
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.5m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3640pF @ 40V
Current - Continuous Drain (Id) @ 25°C 82A Tc
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Rise Time 22 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 51 ns
Continuous Drain Current (ID) 82A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 80V
Drain-source On Resistance-Max 0.0085Ohm
Drain to Source Breakdown Voltage 80V
Pulsed Drain Current-Max (IDM) 326A
Dimensions
Height 6.35mm
Length 6.35mm
Width 6.35mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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